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H11B815300W Datasheet(PDF) 3 Page - Fairchild Semiconductor |
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H11B815300W Datasheet(HTML) 3 Page - Fairchild Semiconductor |
3 / 9 page 3 www.fairchildsemi.com H11B815 Rev. 1.0.1 Transfer Characteristics Isolation Characteristics ** All typicals at TA = 25°C DC Characteristic Test Conditions Symbol Min Typ** Max Units Current Transfer Ratio, Collector-Emitter (IF = 1 mA, VCE = 2 V) CTR 600 7,500 % Saturation Voltage (IF = 20 mA, IC = 5 mA) VCE(sat) 0.8 1.0 V Rise Time (non saturated) (IC = 10 mA, VCE = 2 V, RL = 100V) tr 300 µs Fall Time (non saturated) (IC = 10 mA, VCE = 2 V, RL = 100V) tf 250 µs Characteristic Test Conditions Symbol Min Typ** Max Units Input-Output Isolation Voltage (II-O [ 1 µA, 1 min.) VISO 5000 Vac(rms) Isolation Resistance (VI-O = 500 VDC) RISO 1011 Ω Isolation Capacitance (VI-O = &, f = 1 MHz) CISO 0.5 pf |
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