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MC-458CA721PSA Datasheet(PDF) 1 Page - NEC |
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MC-458CA721PSA Datasheet(HTML) 1 Page - NEC |
1 / 6 page © 1999 MOS INTEGRATED CIRCUIT MC-458CA721ESA, 458CA721PSA 8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM) Document No. M14494EJ2V0DS00 (2nd edition) Date Published February 2000 NS CP(K) Printed in Japan DATA SHEET The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. The mark • • • • shows major revised points. Description The MC-458CA721ESA and MC-458CA721PSA are 8,388,608 words by 72 bits synchronous dynamic RAM module (Small Outline DIMM) on which 5 pieces of 128M SDRAM: µPD45128163 are assembled. These modules provide high density and large quantities of memory in a small space without utilizing the surface- mounting technology on the printed circuit board. Decoupling capacitors are mounted on power supply line for noise reduction. Features • 8,388,608 words by 72 bits organization (ECC type) • Clock frequency and access time from CLK Part number /CAS latency Clock frequency (MAX.) Access time from CLK (MAX.) MC-458CA721ESA-A80 CL = 3 125 MHz 6 ns CL = 2 100 MHz 6 ns MC-458CA721ESA-A10 CL = 3 100 MHz 6 ns CL = 2 77 MHz 7 ns MC-458CA721PSA-A80 CL = 3 125 MHz 6 ns CL = 2 100 MHz 6 ns MC-458CA721PSA-A10 CL = 3 100 MHz 6 ns CL = 2 77 MHz 7 ns • Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge • Pulsed interface • Possible to assert random column address in every cycle • Quad internal banks controlled by BA0, BA1 (Bank Select) • Programmable burst-length (1, 2, 4, 8 and Full Page) • Programmable wrap sequence (Sequential / Interleave) • Programmable /CAS latency (2, 3) • Automatic precharge and controlled precharge • CBR (Auto) refresh and self refresh • Single 3.3V ± 0.3V power supply • LVTTL compatible • 4,096 refresh cycles/64 ms • Burst termination by Burst Stop command and Precharge command • 144-pin small outline dual in-line memory module (Pin pitch = 0.8 mm) • Unbuffered type • Serial PD 5 5 |
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