VUO68-08NO7

V

=

V

A²s

A²s

A²s

A²s

Symbol

Definition

Ratings

typ.

max.

I

R

V

I

A

V

F

1.15

R

1.1 K/W

R

min.

70

V

40

T

= 25°C

VJ

T

=

°C

VJ

mA

1.5

V

=

V

R

T

= 25°C

VJ

I =

A

F

V

T =

°C

C

105

P

tot

110

W

T

= 25°C

C

R

K/W

0.4

20

800

max. non-repetitive reverse blocking voltage

reverse current

forward voltage drop

total power dissipation

Conditions

Unit

1.50

T

= 25°C

VJ

150

V

F0

V

0.82

T

=

°C

VJ

150

12.2

mΩ

V

1.12

T

=

°C

VJ

I =

A

F

V

20

1.39

I =

A

F

60

I =

A

F

60

threshold voltage

slope resistance

for power loss calculation only

µA

125

V

800

max. repetitive reverse blocking voltage

T

= 25°C

VJ

C

J

10

junction capacitance

V =

V;

400

T

= 25°C

f = 1 MHz

R

VJ

pF

I

FSM

t = 10 ms; (50 Hz), sine

T

= 45°C

VJ

max. forward surge current

T

=

°C

VJ

150

I²t

T

= 45°C

value for fusing

T

=

°C

150

V

= 0 V

R

V

= 0 V

R

V

= 0 V

V

= 0 V

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

VJ

R

VJ

R

T

=

°C

VJ

150

300

325

325

315

A

A

A

A

255

275

450

440

800

DAV

d =

rectangular

⅓

bridge output current

thermal resistance junction to case

thJC

thermal resistance case to heatsink

thCH

Rectifier

900

IXYS reserves the right to change limits, conditions and dimensions.

20140226b

Data according to IEC 60747and per semiconductor unless otherwise specified

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