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STN6562 Datasheet(PDF) 3 Page - Stanson Technology |
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STN6562 Datasheet(HTML) 3 Page - Stanson Technology |
3 / 6 page STN6562 Dual N Channel Enhancement Mode MOSFET 4.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STP6562 2008. V1 ELECTRICAL CHARACTERISTICS ( Ta = 25 Unless otherwise noted ) ℃ Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=250uA 30 V Gate Threshold Voltage VGS(th) VDS=VGS,ID=250uA 0.8 1.6 V Gate Leakage Current IGSS VDS=0V,VGS=±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS=24V,VGS=0V 1 uA VDS=24V,VGS=0V TJ=55℃ 10 On-State Drain Current ID(on) VDS≧5V,VGS=10V 30 A Drain-source On-Resistance RDS(on) VGS=10V,ID=2.8A 0.056 0.065 VGS=4.5V,ID=2.3A 0.068 0.075 VGS=2.5V,ID=1.8A 0.097 0.105 Forward Transconductance gfs VDS=4.5V,ID=2.5A 4.6 S Diode Forward Voltage VSD IS=1.25A,VGS=0V 1.2 V Dynamic Total Gate Charge Qg 4.2 6 nC Gate-Source Charge Qgs 0.6 Gate-Drain Charge Qgd 1.7 Input Capacitance Ciss VDS=15V,VGS=0, f=1MHz 340 pF Output Capacitance Coss 55 Reverse Transfer Capacitance Crss 41 Turn-On Time Td(on) VDD=15V, RL=15 , VGEN=10V, RG=3 2.5 ns tr 2.5 Turn-Off Time Td(off) 20 tf 4 VDS=15V,VGS=4.5V, VDS=2.0A |
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