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STC4606 Datasheet(PDF) 1 Page - Stanson Technology |
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STC4606 Datasheet(HTML) 1 Page - Stanson Technology |
1 / 8 page STC4606 N&P Pair Enhancement Mode MOSFET 6.5A / -6.9A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STC4606 2008. V1 DESCRIPTION The STC4606 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application such as notebook computer power management and other battery powered circuits, where high-side switching, low in-line power loss and resistance to transient are needed. PIN CONFIGURATION SOP-8 PART MARKING SOP-8 Y∶Year A∶Date Code FEATURE N-Channel 30V/6.9A, RDS(ON) = 30mΩ(Typ) @VGS = 10V 30V/6.0A, RDS(ON) = 46mΩ @VGS = 4.5V P-Channel -30V/-6.0A, RDS(ON) = 41mΩ(Typ) @VGS = -10V -30V/-5.0A, RDS(ON)= 60mΩ @VGS = - 4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package |
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