2SJ574 datasheet(2/8 Pages) HITACHI

Part #	2SJ574

Description	Silicon P Channel MOS FET High Speed Switching

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Manufacturer	HITACHI [Hitachi Semiconductor]

Direct Link	http://www.renesas.com/eng

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2SJ574

2

Absolute Maximum Ratings (Ta = 25

°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

V

DSS

-30

V

Gate to source voltage

V

GSS

±20

V

Drain current

I

D

-300

mA

Drain peak current

I

D(pulse)

Note1

-1.2

A

Body-drain diode reverse drain current

I

DR

-300

mA

Channel dissipation

Pch

Note 2

400

mW

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Note:

1. PW

≤ 10 µs, duty cycle ≤ 1%

2. Value on the alumina ceramic board (12.5x20x0.7mm)

Electrical Characteristics (Ta = 25

°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown

voltage

V

(BR)DSS

-30

—

V

I

D = -100 µA, VGS = 0

Gate to source breakdown

voltage

V

(BR)GSS

±20

—

V

I

G = ±100 µA, VDS = 0

Gate to source leak current

I

GSS

——

±5

µAV

GS = ±16 V, VDS = 0

Zero gate voltege drain

current

I

DSS

——-1

µAV

DS = -30 V, VGS = 0

Gate to source cutoff voltage

V

GS(off)

-1.3

—

-2.3

V

I

D = -10µA, VDS = -5 V

Static drain to source on state R

DS(on)

—

1.1

1.3

Ω

I

D = -150 mA,VGS = -10 V

Note 3

resistance

R

DS(on)

—

2.2

3.1

Ω

I

D = -150 mA,VGS = -4 V

Note 3

Forward transfer admittance

|y

fs|

195

300

—

mS

I

D = -150 mA, VDS = -10 V

Note 3

Input capacitance

Ciss

—

50

—

pF

V

DS = -10 V

Output capacitance

Coss

—

40

—

pF

V

GS = 0

Reverse transfer capacitance Crss

—

15

—

pF

f = 1 MHz

Turn-on delay time

t

d(on)

—

20—ns

I

D = -150 mA, VGS = -10 V

Rise time

t

r

—

50—ns

R

L = 66.6 Ω

Turn-off delay time

t

d(off)

—

110

—

ns

Fall time

t

f

—

105

—

ns

Note:

3. Pulse test

4. Marking is BP

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