Drain to Source Breakdown Voltage vs. Junction Temperature

-50

25

50

75

100

125 150

0

-25

I

V

T

t - Time (seconds)

Maximum Rate Forward Biased Safe Operating Area

Transient Thermal Response - Junction to Case

Single Pulse

T = 150°C

V

R

Package Limit

Thermal Limit

0.5

0.2

0.1

10us

100us

1ms

10ms

DC

0.05

0.02

Single Pulse

0.1

0.01

0.9

1.0

1

0.10

1.1

10

100

1.00

1.2

0.01

0.00

0.8

1

1.0E-06

1.0E-04

1.0E-05

1.0E-00

1.0E-01

1.0E-02

1.0E-03

100

1000

10

V

Capacitance

Crss

Coss

Ciss

1000

100

10

10000

0

0

400

600

200

I

T

Gate Threshold Voltage vs. Junction Temperature

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

-50

25

50

75

100

125 150

0

-25

Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email: chipcomponents@micross.com

4

Notes:

P

DM

t1

t1

t2

t2

Duty Cycle, D =

ICE60N800D