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2SJ553L Datasheet(PDF) 3 Page - Hitachi Semiconductor |
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2SJ553L Datasheet(HTML) 3 Page - Hitachi Semiconductor |
3 / 9 page 2SJ553(L),2SJ553(S) 3 Main Characteristics 80 60 40 20 0 50 100 150 200 –100 –10 –1 –0.1 –0.1 –1 –10 0 –2 –4 –6 –8 –10 0 –1–2–3 –4 –5 –100 –1000 –50 –40 –30 –20 –10 -25 °C 25 °C 1 ms Ta = 25 °C 10 µs DS Pulse Test V = –10 V PW = 10 ms (1 shot) 100 µs –50 –40 –30 –20 –10 –2.5 V –2 V V = –10 V GS –8 V –5 V –3.5 V –3 V –4 V Power vs. Temperature Derating Drain to Source Voltage V (V) DS Maximum Safe Operation Area Drain to Source Voltage V (V) DS Typical Output Characteristics Gate to Source Voltage V (V) GS Typical Transfer Characteristics Operation in this area is limited by R DS(on) Case Temperature Tc (°C) Tc = 75 °C DC Operation (Tc = 25 °C) Pulse Test |
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