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2SJ517 Datasheet(PDF) 5 Page - Hitachi Semiconductor

Part # 2SJ517
Description  Silicon P Channel MOS FET High Speed Power Switching
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Manufacturer  HITACHI [Hitachi Semiconductor]
Direct Link  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

2SJ517 Datasheet(HTML) 5 Page - Hitachi Semiconductor

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2SJ517
5
5
200
500
100
20
10
50
–0.1 –0.2
–0.5
–1
–2
–5
–10
0
–4
–8
–12
–16
–20
500
200
100
20
10
50
1000
0
–10
–20
–30
–40
0
0
–4
–8
–12
–16
–20
–50
4
8
12
16
20
200
100
20
50
10
500
5
–0.1 –0.2
–0.5
–1
–2
–5
–10
di / dt = 50 A / µs
V
= 0, Ta = 25 °C
GS
VGS
VDS
V
= –5 V
–10 V
DD
V
= –4 V, V
= –10 V
duty < 1 %
GS
DD
Reverse Drain Current
I
(A)
DR
Body–Drain Diode Reverse
Recovery Time
Drain to Source Voltage V
(V)
DS
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge
Qg (nc)
Dynamic Input Characteristics
Drain Current
I
(A)
D
Switching Characteristics
Ciss
Coss
Crss
V
= 0
f = 1 MHz
GS
V
= –5 V
–10 V
DD
t f
r
t
d(on)
t
d(off)
t


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