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2SJ479S Datasheet(PDF) 4 Page - Hitachi Semiconductor

Part # 2SJ479S
Description  Silicon P Channel DV-L MOS FET High Speed Power Switching
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Manufacturer  HITACHI [Hitachi Semiconductor]
Direct Link  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

2SJ479S Datasheet(HTML) 4 Page - Hitachi Semiconductor

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2SJ479(L), 2SJ479(S)
4
Main Characteristics
100
75
50
25
0
50
100
150
200
–500
–200
–100
–20
–50
–10
–2
–5
–1
–0.5
–0.1 –0.3
–1
–3
–10
–30
–100
1 ms
Ta = 25
°C
PW
=
10
ms
(1shot)
10
µs
Case Temperature Tc (
°C)
Power vs. Temperature Derating
Drain to Source Voltage V
(V)
DS
Maximun Safe Operation Area
Operation in
this area is
limited by R DS(on)
3
1
0.3
0.1
0.03
0.01
10
µ
100
µ
1 m
10 m
100 m
1
10
DM
P
PW
T
D =
PW
T
ch – c(t) = s (t) •
ch – c
ch – c = 2.5
°C/W, Tc = 25 °C
θ
γ
θ
θ
Tc = 25
°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot
pulse
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width


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