2SJ319S datasheet(4/9 Pages) HITACHI

Part #	2SJ319S

Description	Silicon P-Channel MOS FET

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Manufacturer	HITACHI [Hitachi Semiconductor]

Direct Link	http://www.renesas.com/eng

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4 / 9 page

2SJ319(L), 2SJ319(S)

4

–20

–16

–12

–8

–4

0

–4

–8

12

–16

–20

Gate to Source Voltage

V

(V)

GS

–1 A

–2 A

Pulse Test

D

I

= –5 A

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

Drain Current

I

(A)

D

Static Drain to Source on State Resistance

vs. Drain Current

10

5

2

1

0.5

0.2

0.1

–0.2

–0.5

–1

–2

–5

–10

V

= –10 V

Pulse Test

GS

5

4

3

2

1

–40

0

40

80

120

160

Case Temperature

Tc

(°C)

0

–2 A

–1 A

I

= –5 A

D

Static Drain to Source on State Resistance

vs. Temperature

V

= –10 V

Pulse Test

GS

Drain Current I

(A)

D

Forward Transfer Admittance vs.

Drain Current

3

2

1

0.5

0.2

0.1

–0.05 –0.1 –0.2

–0.5

–1

–2

–5

–10

Tc = –25 °C

25 °C

75 °C

V

= –10 V

Pulse Test

DS

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