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SPN80T06T220TGB Datasheet(PDF) 1 Page - SYNC POWER Crop. |
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SPN80T06T220TGB Datasheet(HTML) 1 Page - SYNC POWER Crop. |
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1 / 9 page  2014/03/19 V.1 Page 1 SPN80T06 N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS The SPN80T06 is the N-Channel enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectifier application, notebook computer power management and other battery powered circuits. DC/DC Converter Load Switch SMPS Secondary Side Synchronous Rectifier FEATURES PIN CONFIGURATION TO-220-3L TO-263-2L TO-262-3L PART MARKING TO-220-3L TO-263-2L TO-262-3L 60V/80A, RDS(ON)= 8mΩ@VGS= 10V RDS(ON)= 10mΩ@VGS= 5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TO-220-3L/TO-263-2L/TO-262-3L package design |
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