2SD2423

2

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to base voltage

V

CBO

50

V

Collector to emitter voltage

V

CEO

50

V

Emitter to base voltage

V

EBO

7V

Collector current

I

C

1.5

A

Collector power dissipation

P

1

1W

Junction temperature

Tj

150

°C

Storage temperature

Tstg

–55 to +150

°C

Collector to emitter diode forward current

I

D

1.5

A

Note:

1. When using the ceramic board 0.7 mm thick (12.5 mm x 20 mm).

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to base breakdown

voltage

V

(BR)CBO

50

—

70

V

I

Collector to emitter breakdown

voltage

V

(BR)CEO

50

—

—

V

I

Collector to emitter sustaining

voltage

V

CEO(sus)

50

—

70

V

I

L = 10 mH*

1

Emitter to base breakdown

voltage

V

(BR)EBO

7—

—

V

I

Collector cutoff current

I

CEO

——

10

µAV

DC current transfer ratio

h

FE

2000

—

10000

V

1

Collector to emitter saturation

voltage

V

CE(sat)1

—

—

1.5

V

I

1

Collector to emitter saturation

voltage

V

CE(sat)2

—

—

2.3

V

I

1

Base to emitter saturation

voltage

V

BE(sat)1

—

—

2.0

V

I

1

Base to emitter saturation

voltage

V

BE(sat)2

—

—

2.5

V

I

1

Emitter to collector diode

forward voltage

V

D

—

—

3.5

V

I

1

Notes: 1. Pulse test

2. Marking is “GT”.