SBC847BPDW1T3G datasheet(6/17 Pages) ONSEMI

Part #	SBC847BPDW1T3G

Description	Dual General Purpose Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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BC846BPDW1, BC847BPDW1, BC848CPDW1 Series

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6

TYPICAL PNP CHARACTERISTICS — BC846/SBC846

Figure 9. DC Current Gain vs. Collector

Current

Figure 10. Collector Emitter Saturation Voltage

vs. Collector Current

IC, COLLECTOR CURRENT (A)

1

0.1

0.01

0.001

0

100

200

300

400

500

0.1

0.01

0.001

0.0001

0

0.05

0.10

0.15

0.20

0.25

0.30

Figure 11. Base Emitter Saturation Voltage vs.

Collector Current

Figure 12. Base Emitter Voltage vs. Collector

Current

IC, COLLECTOR CURRENT (A)

0.1

0.01

0.001

0.0001

0.2

0.3

0.5

0.6

0.7

0.8

1.0

0.1

0.01

0.001

0.0001

0.2

0.3

0.5

0.6

0.8

0.9

1.0

1.2

VCE = 5 V

150°C

−55°C

25°C

IC/IB = 20

150°C

−55°C

25°C

0.4

0.9

IC/IB = 20

150°C

−55°C

25°C

VCE = 5 V

150°C

−55°C

25°C

0.4

0.7

1.1

Figure 13. Collector Saturation Region

IB, BASE CURRENT (mA)

Figure 14. Base−Emitter Temperature Coefficient

IC, COLLECTOR CURRENT (mA)

-1.0

-1.2

-1.6

-2.0

-0.02

-1.0

-10

0

-20

-0.1

-0.4

-0.8

-0.2

-2.0

-10

-200

-1.0

TJ = 25°C

IC =

-10 mA

-0.05

-0.2

-0.5

-2.0

-5.0

-100 mA

-20 mA

-1.4

-1.8

-2.2

-2.6

-3.0

-0.5

-5.0

-20

-50

-100

-55

°C to 125°C

qVB for VBE

-50 mA

-200 mA

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ON Semiconductor	SBC847BPDW1T3G	142Kb / 17P	Dual General Purpose Transistors April, 2016 ??Rev. 12

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SBC847BPDW1T3G Datasheet(PDF) 6 Page - ON Semiconductor

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