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2SD2123L Datasheet(PDF) 2 Page - Hitachi Semiconductor |
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2SD2123L Datasheet(HTML) 2 Page - Hitachi Semiconductor |
2 / 7 page 2SD2122(L)/(S), 2SD2123(L)/(S) 2 Absolute Maximum Ratings (Ta = 25°C) Ratings Item Symbol 2SD2122(L)/(S) 2SD2123(L)/(S) Unit Collector to base voltage V CBO 180 180 V Collector to emitter voltage V CEO 120 160 V Emitter to base voltage V EBO 55V Collector current I C 1.5 1.5 A Collector peak current I C(peak) 33A Collector power dissipation P C* 1 18 18 W Junction temperature Tj 150 150 °C Storage temperature Tstg –55 to +150 –55 to +150 °C Note: 1. Value at T C = 25°C. Electrical Characteristics (Ta = 25°C) 2SD2122(L)/(S) 2SD2123(L)/(S) Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base breakdown voltage V (BR)CBO 180 — — 180 — — V I C = 1 mA, IE = 0 Collector to emitter breakdown voltage V (BR)CEO 120 — — 160 — — V I C = 10 mA, RBE = ∞ Emitter to base breakdown voltage V (BR)EBO 5— — 5 — — V I E = 1 mA, IC = 0 Collector cutoff current I CBO ——10——10 µAV CB = 160 V, IE = 0 DC current transfer ratio h FE1* 2 60 — 200 60 — 200 A V CE = 5 V, IC = 150 mA* 1 h FE2 30 — — 30 — — V CE = 5 V, IC = 500 mA* 1 Collector to emitter saturation voltage V CE(sat) ——1 ——1 V I C = 500 mA, I B = 50 mA* 1 Base to emitter voltage V BE — — 1.5 — — 1.5 V V CE = 5 V, IC = 150 mA* 1 Gain bandwidth product f T — 180 — — 180 — MHz V CE = 5 V, IC = 150 mA* 1 Collector output capacitance Cob — 14 — — 14 — pF V CB = 10 V, IE = 0, f = 1 MHz Notes: 1. Pulse test 2. The 2SD2122(L)/(S) and 2SD2123(L)/(S) are grouped by h FE1 as follows. BC 60 to 120 100 to 200 |
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Similar Description - 2SD2123L |
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