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2SD1521 Datasheet(PDF) 2 Page - Hitachi Semiconductor |
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2SD1521 Datasheet(HTML) 2 Page - Hitachi Semiconductor |
2 / 6 page 2SD1521 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage (Zener breakdown voltage) V (BR)CBO [V Z] 50 60 70 V I C = 0.1 mA, IE = 0 Emitter to base breakdown voltage V (BR)EBO 7— — V I E = 50 mA, IC = 0 Collector cutoff current I CEO —— 10 µAV CE = 50 V, RBE = ∞ DC current transfer ratio h FE 2000 — 30000 V CE = 3 V, IC = 1 A* 1 Collector to emitter saturation V CE (sat)1 — — 1.5 V I C = 1 A, IB = 1 mA* 1 voltage V CE (sat)2 — — 2.0 V I C = 1.5 A, IB = 1.5 mA* 1 Base to emitter saturation V BE (sat)1 — — 2.0 V I C = 1 A, IB = 1 mA* 1 voltage V BE (sat)2 — — 2.5 V I C = 1.5 A, IB = 1.5 mA* 1 C to E diode forward voltage V D — — 3.0 V I D = 1.5 A Turn on time Ton — 0.5 — µsI C = 1 A, IB1 = –IB2 = 1 mA Turn off time Toff — 2.0 — µs Note: 1. Pulse test. 0 50 100 150 Case temperature TC (°C) Maximum Collector Dissipation Curve 15 10 5 0.01 0.03 0.1 0.3 1.0 10 3 Collector to emitter voltage VCE (V) 3 10 30 100 300 Area of Safe Operation 1 µs 100 µs iC (peak) IC (max) Ta = 25 °C 1 shot pulse |
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