Data Sheet DS00111 /June 2010

Process information and data (“Information”) in this document is an outline only , for general information purposes ; it does not constitute a representation or warranty

as to capability , performance or suitability of the Process for any given application. User must satisfy himself that the Process is suitable for his requirements .

While Information herein is believed correct and accurate , it is subject to change without notice and Plessey accepts no liability arising from the use or application of

such Information.

All use of , and product manufactured and supplied using the Process , will be subject to Plessey’s standard trading terms, which are available on request .

Plessey Semiconductors Ltd. Tamerton Road, Roborough, Plymouth, United Kingdom, PL6 7BQ

Tel: +44 1752 693000

Fax: +44 1752 693200

WPX

Bipolar Process

Data Sheet DS00111 / June 2010

Key parameters (minimum geometry device)

NPN

fT

5 GHz at Ic=0.3 mA, Vce=2V

CJC

8 fF

CJE

10fF

Bvceo

18V

Applications

•

Linear applications

•

DC to DC converters

•

Switching regulators

•

Power management

Key Process Features

•

High speed NPN transistors

•

Lateral PNP transistors

•

0.9 fF/sq µm MIS capacitor (optional)

•

3 resistors including HV polysilicon

•

•

Zener Diodes BVz=5.3 V (optional)

•

High packing density

•

Very low leakage currents

npn cross section

Epitaxy (n-)

BN

Substrate (p-)

DC

Collector

LOCOS

BP

IS

LOCOS

Base

Emitter

IS

BP

Minimum geometry npn fT curve

0.0

1.0

2.0

3.0

4.0

5.0

6.0

1.E-06

1.E-05

1.E-04

1.E-03

1.E-02

IC (A)

fT (GHz)

Vce=2V

npn parameters (1.5 x 1.5 um emitter)

parameter

Condition

Value

Units

fT

Vce=2V

5

GHz

HFE

Ic=10

μA Vce=2V

85

VAF

70

V

BVCEO

Ic=1

μA

>18

V

BVCBO

Ic=5

μA

>30

V

CJE

Vbe=0

10

fF

CJC

Vbc=0

8

fF

CJS

Vcs=0

97

fF

Lateral pnp parameters

parameter

Condition

Value

Units

fT

Vce=2V

100

MHz

HFE

Ic=10

μA Vcb=0V

60

VAF

20

V

BVCEO

Ic=1

μA

>18

V

Resistor Values

parameter

Value

Units

Poly

3.2

± 0.5

k

Ω

Base

550

± 50

Ω

PR

67.5

± 7.5

Ω

Design Rules

Feature

Min

μm

Spacing

μm

Emitter

1.0 x 2.5

or

1.5 x 1.5

Poly (EP) resistor

1.5

2.0

Base and PR

resistor

3.0

1.5

Contact

1.0 x 2.5

or

1.5 x 1.5

1st Layer metal

2.0

2.0

2

4.0

3.0

WPX is a versatile low capacitance linear bipolar process providing

excellent functionality at low cost. Features such as high value poly

resistors, nitride capacitors, Schottky and Zener diodes and two layer

metal allow low current circuits to be built with high packing densities,