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2SC5545 Datasheet(PDF) 2 Page - Hitachi Semiconductor |
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2SC5545 Datasheet(HTML) 2 Page - Hitachi Semiconductor |
2 / 8 page 2SC5545 2 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Ratings Unit Collector to base voltage V CBO 15 V Collector to emitter voltage V CEO 6V Emitter to base voltage V EBO 1.5 V Collector current I C 50 mA Collector power dissipation Pc 150 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25 °C) Item Symbol Min Typ Max Unit Test Conditions Collector to base breakdown voltage V (BR)CBO 15 ——V I C = 10µA , IE = 0 Collector cutoff current I CBO —— 1 µAV CB = 12V , IE = 0 Collector cutoff current I CEO —— 1 mA V CE = 6V , RBE = Åá Emitter cutoff current I EBO —— 10 µAV EB = 1.5V , IC = 0 DC current transfer ratio h FE 80 120 160 V V CE = 3V , IC = 20mA Collector output capacitance Cob — 0.69 1.1 pF V CB = 3V , IE = 0 f = 1MHz Gain bandwidth product f T 10 12.6 — GHz V CE = 3V , IC = 20mA Power gain PG 14 16 — dB V CE = 3V, IC = 20mA f = 900MHz Noise figure NF — 1.1 2.0 dB V CE = 3V, IC = 5mA f = 900MHz |
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