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JAN2N3507 Datasheet(PDF) 2 Page - Semicoa Semiconductor |
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JAN2N3507 Datasheet(HTML) 2 Page - Semicoa Semiconductor |
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2 / 2 page  Rev. E 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2 www.SEMICOA.com 2N3507 Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25°C Off Characteristics Parameter Symbol Test Conditions Min Typ Max Units Collector-Base Breakdown Voltage V(BR)CBO IC = 100 µA 80 Volts Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10 mA 50 Volts Emitter-Base Breakdown Voltage V(BR)EBO IE = 10 µA 5 Volts Collector-Emitter Cutoff Current ICEX1 VCE = 60 Volts, VEB = 4 Volts 1 µA Collector-Emitter Cutoff Current ICEX2 VCE = 60 Volts, VEB = 4 Volts, TA = 150°C 1.5 mA On Characteristics Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0% Parameter Symbol Test Conditions Min Typ Max Units DC Current Gain hFE1 hFE2 hFE3 hFE4 hFE5 IC = 500 mA, VCE = 1 Volts IC = 1.5 A, VCE = 2 Volts IC = 2.5 A, VCE = 3 Volts IC = 3.0 A, VCE = 5 Volts IC = 500 mA, VCE = 1 Volts TA = -55°C 35 30 25 20 17 175 150 Base-Emitter Saturation Voltage VBEsat1 VBEsat2 VBEsat3 IC = 500 mA, IB = 50 mA IC = 1.5 A, IB = 150 mA IC = 2.5 A, IB = 250 mA 0.5 1.0 1.5 Volts Collector-Emitter Saturation Voltage VCEsat1 VCEsat2 VCEsat3 IC = 500 mA, IB = 50 mA IC = 1.5 A, IB = 150 mA IC = 2.5 A, IB = 250 mA 0.8 1.0 1.3 2.0 Volts Dynamic Characteristics Parameter Symbol Test Conditions Min Typ Max Units Magnitude – Common Emitter, Short Circuit Forward Current Transfer Ratio |hFE| VCE = 5 Volts, IC = 100 mA, f = 20 MHz 3 15 Open Circuit Output Capacitance COBO VCB = 10 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz 40 pF Open Circuit Input Capacitance CIBO VEB = 3 Volts, IC = 0 mA, 100 kHZ < f < 1 MHz 300 pF Delay Time td IC = 1.5 A, IB1 = 150 mA 15 ns Rise Time tr IC = 1.5 A, IB1 = 150 mA 30 ns Switching Characteristics Storage Time ts IC = 1.5 A, IB1=IB2 = 150 mA 55 ns Fall Time tf IC = 1.5 A, IB1=IB2 = 150 mA 35 ns Copyright 2010 SEMICOA Corporation |
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