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2SB1012 Datasheet(PDF) 3 Page - Hitachi Semiconductor

Part # 2SB1012
Description  Silicon PNP Epitaxial
Download  6 Pages
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Manufacturer  HITACHI [Hitachi Semiconductor]
Direct Link  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

2SB1012 Datasheet(HTML) 3 Page - Hitachi Semiconductor

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2SB1012(K)
3
0
50
100
150
Case Temperature TC (°C)
Maximum Collector Dissipation Curve
10
20
30
–0.003
–0.01
–0.03
–0.1
–0.3
–1.0
–3
Collector to emitter Voltage VCE (V)
–3
–10
–30
–100
–300
Area of Safe Operation
iC (peak)
IC (max)
Ta = 25
°C
1 Shot pulse
Collector to emitter Voltage VCE (V)
0
–1–2–3–4–5
Typical Output Characteristics
–1
–2
–3
–4
–5
TC = 25°C
Pulse
IB = –0.3 mA
–0.5 mA
–1 mA
–3 mA
–5 mA
–7 mA
30
100
300
1,000
3,000
10,000
30,000
Collector current IC (A)
–0.03
–0.1
–0.3
–1.0
–3
DC Current Transfer Ratio vs.
Collector Current
VCE = –3 V
Pulse Test
Ta
= 75
°C
25
°C
–25
°C


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