GT6301K datasheet(2/4 Pages) ETL

Part #	GT6301K

Description	N - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T

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Manufacturer	ETL [E-Tech Electronics LTD]

Direct Link	http://e-tech.com.hk

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2 / 4 page

GT6301K

Page: 2/4

ISSUED DATE :2006/01/09

REVISED DATE :

Electrical Characteristics (Tj = 25 :::: unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

BVDSS

30

-

V

VGS=0, ID=250uA

Breakdown Voltage Temperature Coefficient

BVDSS /

Tj

-

0.06

-

V/ :

Reference to 25 : , ID=1mA

Gate Threshold Voltage

VGS(th)

0.5

-

1.5

V

VDS=VGS, ID=250uA

Forward Transconductance

gfs

-

600

-

mS

VDS=10V, ID=600mA

Gate-Source Leakage Current

IGSS

-

±10

uA

VGS= ±16V

Drain-Source Leakage Current(Tj=25 : )

-

1

uA

VDS=30V, VGS=0

Drain-Source Leakage Current(Tj=70 : )

IDSS

-

100

uA

VDS=24V, VGS=0

-

1

VGS=10V, ID=500mA

-

2

VGS=4.5V, ID=400mA

Static Drain-Source On-Resistance

RDS(ON)

-

3

VGS=2.7V, ID=200mA

Total Gate Charge2

Qg

-

1

1.6

Gate-Source Charge

Qgs

-

0.5

-

Gate-Drain (“Miller”) Change

Qgd

-

0.5

-

nC

ID=600mA

VDS=50V

VGS=4.5V

Turn-on Delay Time2

Td(on)

-

12

-

Rise Time

Tr

-

10

-

Turn-off Delay Time

Td(off)

-

56

-

Fall Time

Tf

-

29

-

ns

VDS=30V

ID=600mA

VGS=10V

RG=3.3

RD=52

Input Capacitance

Ciss

-

32

50

Output Capacitance

Coss

-

8

-

Reverse Transfer Capacitance

Crss

-

6

-

pF

VGS=0V

VDS=25V

f=1.0MHz

Source-Drain Diode

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Forward On Voltage2

VSD

-

1.2

V

IS=1.2A, VGS=0V

Notes: 1. Pulse width limited by Max. junction temperature.

2. Pulse width 300us, duty cycle 2%.

3. Surface mounted on 1 in2 copper pad of FR4 board t 5sec; 180 : /W when mounted on Min. copper pad.

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