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2SA1188 Datasheet(PDF) 2 Page - Hitachi Semiconductor |
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2SA1188 Datasheet(HTML) 2 Page - Hitachi Semiconductor |
2 / 5 page 2SA1188, 2SA1189 2 Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SA1188 2SA1189 Unit Collector to base voltage V CBO –90 –120 V Collector to emitter voltage V CEO –90 –120 V Emitter to base voltage V EBO –5 –5 V Collector current I C –100 –100 mA Emitter current I E 100 100 mA Collector power dissipation P C 400 400 mW Junction temperature Tj 150 150 °C Storage temperature Tstg –55 to +150 –55 to +150 °C Electrical Characteristics (Ta = 25°C) 2SA1188 2SA1189 Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base breakdown voltage V (BR)CBO –90 — — –120 — — V I C = –10 µA, IE = 0 Collector to emitter breakdown voltage V (BR)CEO –90 — — –120 — — V I C = –1 mA, RBE = ∞ Emitter to base breakdown voltage V (BR)EBO –5 — — –5 — — V I E = –10 µA, IC = 0 Collector cutoff current I CBO — — –0.1 — — –0.1 µAV CB = –70 V, IE = 0 Emitter cutoff current I EBO — — –0.1 — — –0.1 µAV EB = –2 V, IC = 0 DC current trnsfer ratio h FE* 1 250 — 800 250 — 800 V CE = –12 V, I C = –2 mA* 2 Collector to emitter saturation voltage V CE(sat) — –0.05 –0.15 — –0.05 –0.15 V I C = –10 mA, I B = –1 mA* 2 Base to emitter saturation voltage V BE(sat) — –0.7 –1.0 — –0.7 –1.0 V Gain bandwidth product f T — 130 — — 130 — MHz V CE = –6 V, I C = –10 mA Collector output capacitance Cob — 3.2 — — 3.2 — pF V CB = –10 V, IE = 0, f = 1 MHz Notes: 1. The 2SA1188 and 2SA1189 are grouped by h FE as follows. 2. Pulse test DE 250 to 500 400 to 800 See characteristic curves of 2SA1190 and 2SA1191. |
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