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1S2076 Datasheet(PDF) 2 Page - Hitachi Semiconductor

Part # 1S2076
Description  Silicon Epitaxial Planar Diode for Various Detector, Modulator, Demodulator
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Manufacturer  HITACHI [Hitachi Semiconductor]
Direct Link  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

1S2076 Datasheet(HTML) 2 Page - Hitachi Semiconductor

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1S2076
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Value
Unit
Peak reverse voltage
V
RM
35
V
Reverse voltage
V
R
30
V
Peak forward current
I
FM
450
mA
Non-Repetitive peak forward surge current
I
FSM*1
A
Average forward current
I
O
150
mA
Power dissipation
Pd
250
mW
Junction temperature
Tj
175
°C
Storage temperature
Tstg
–65 to +175
°C
Note:
Within 1s forward surge current.
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Forward voltage
V
F
0.64
0.80
V
I
F = 10mA
Reverse current
I
R
0.1
µAV
R = 30V
Capacitance
C
3.0
pF
V
R = 1V, f = 1MHz
Reverse recovery time
t
rr*
8.0
ns
I
F = IR = 10mA, Irr = 1mA
Note:
Reverse recovery time test circuit
3k
0.1
µF
Ro = 50
Rin = 50
DC
Supply
Pulse
Generator
Sampling
Oscilloscope
Trigger


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