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1S2076 Datasheet(PDF) 2 Page - Hitachi Semiconductor |
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1S2076 Datasheet(HTML) 2 Page - Hitachi Semiconductor |
2 / 6 page 1S2076 2 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Peak reverse voltage V RM 35 V Reverse voltage V R 30 V Peak forward current I FM 450 mA Non-Repetitive peak forward surge current I FSM*1 A Average forward current I O 150 mA Power dissipation Pd 250 mW Junction temperature Tj 175 °C Storage temperature Tstg –65 to +175 °C Note: Within 1s forward surge current. Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Condition Forward voltage V F 0.64 — 0.80 V I F = 10mA Reverse current I R — — 0.1 µAV R = 30V Capacitance C — — 3.0 pF V R = 1V, f = 1MHz Reverse recovery time t rr* — — 8.0 ns I F = IR = 10mA, Irr = 1mA Note: Reverse recovery time test circuit 3k Ω 0.1 µF Ro = 50 Ω Rin = 50 Ω DC Supply Pulse Generator Sampling Oscilloscope Trigger |
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Similar Description - 1S2076 |
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