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G8522-02 Datasheet(PDF) 2 Page - Hamamatsu Corporation

Part # G8522-02
Description  GaAs PIN photodiode
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Manufacturer  HAMAMATSU [Hamamatsu Corporation]
Direct Link  http://www.hamamatsu.com
Logo HAMAMATSU - Hamamatsu Corporation

G8522-02 Datasheet(HTML) 2 Page - Hamamatsu Corporation

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GaAs PIN photodiode
G8522 series
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2002 Hamamatsu Photonics K.K.
Cat. No. KGPD1008E01
Jan. 2002 DN
WAVELENGTH (nm)
(Typ. Ta=25 ˚C)
600
400
0
0.1
0.2
0.6
0.5
0.4
0.3
800
1000
REVERSE VOLTAGE (V)
(Typ. Ta=25 ˚C)
1
0.1
0.01
100 fF
10 pF
1 pF
10
100
G8522-03
G8522-02
G8522-01
KGPDA0015EA
KGPDB0046EA
s Dimensional outline (unit: mm)
s Terminal capacitance vs. reverse voltage
s Spectral response
s Dark current vs. reverse voltage
REVERSE VOLTAGE (V)
(Typ. Ta=25 ˚C)
1
0.1
0.01
10 fA
100 fA
100 pA
10 pA
1 pA
10
100
WINDOW
3.0 ± 0.2
4.6 ± 0.1
5.4 ± 0.2
0.45
LEAD
PHOTOSENSITIVE
SURFACE
CASE
2.54 ± 0.2
1.2 MAX.
KGPDB0044EA
KGPDB0045EA
2


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