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G5851-103 Datasheet(PDF) 1 Page - Hamamatsu Corporation |
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G5851-103 Datasheet(HTML) 1 Page - Hamamatsu Corporation |
1 / 4 page PHOTODIODE InGaAs PIN photodiode Long wavelength type G8421/G8371/G5851 series Features l Long cut-off wavelength: 1.9 µm l 3-pin TO-18 package: low price l Thermoelectrically cooled TO-18 package: low dark current l Active area: φ0.3 to φ3 mm Applications l Optical power meter l Gas analyzer l NIR (near infrared) photometry I Specifications / Absolute maximum ratings Absolute maximum ratings Active area Thermistor power dissipation TE-cooler allowable current Reverse voltage VR Operating temperature Topr Storage temperature Tstg Type No. Dimensional outline/ Window material Package Cooling (mm) (mW) (A) (V) (°C) (°C) G8421-03 f0.3 G8421-05 f0.5 G8371-01 ➀ TO-18 f1 G8371-03 ➁ TO-5 Non-cooled f3 - - -40 to +85 -55 to +125 G5851-103 f0.3 G5851-11 f1 G5851-13 ➂ TO-8 One-stage TE-cooled f3 1.5 G5851-203 f0.3 G5851-21 f1 G5851-23 ➃ TO-8 Two-stage TE-cooled f3 0.2 1.0 2 -40 to +70 -55 to +85 I Electrical and optical characteristics (Typ. unless otherwise noted) Measurement Condition Element temperature Spectral response range l Peak sensitivity wavelength lp Photo sensitivity S l=lp Dark current ID VR=1 V Cut-off frequency fc VR=1 V RL=50 W Terminal capacitance Ct VR=1 V f=1 MHz Shunt resistance Rsh V4=10 mV D* l=lp NEP l=lp Type No. (°C) (µm) (µm) (A/W) Typ. (nA) Max. (nA) -3 dB (MHz) (pF) (MW) (cm·Hz1/2/W) (W/Hz1/2) G8421-03 30 300 100 8 1.5 9 × 10-14 G8421-05 50 500 80 20 1 1.5 × 10-13 G8371-01 100 1000 40 80 0.5 2 × 10-13 G8371-03 25 0.9 to 1.9 2000 20000 3 800 0.05 5 × 1011 8 × 10-13 G5851-103 3 30 100 8 15 3 × 10-14 G5851-11 10 100 40 80 5 6 × 10-14 G5851-13 -10 0.9 to 1.87 200 2000 3 800 0.5 1.5 × 1012 2 × 10-13 G5851-203 1.5 15 100 8 35 2 × 10-14 G5851-21 5 50 40 80 10 4 × 10-14 G5851-23 -20 0.9 to 1.85 1.75 1.1 100 1000 3 800 1 2.5 × 1012 1.5 × 10-13 1 |
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