InGaAs PIN photodiode

G6849 series

HAMAMATSU PHOTONICS K.K., Solid State Division

1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com

U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218

Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658

France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10

United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777

North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01

Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741

Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.

Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2002 Hamamatsu Photonics K.K.

WAVELENGTH (µm)

2.0

0.5

0

(Typ. Ta=25 ˚C)

0.8

1.0

1.2

1.4

1.6

1.8

1

0.6

WAVELENGTH (µm)

(Typ. Ta=25

˚C)

1.0

1.2

1.4

1.6

1.8

0.8

0

1

-1

2

G6849

G6849-01

100 nA

0.01

0.1

1

10

100

REVERSE VOLTAGE (V)

10 nA

100 pA

10 pA

1 nA

1 µA

(Typ. Ta=25 ˚C)

10 G

Ω

-40

-20

0

40

60

80

100

AMBIENT TEMPERATURE (˚C)

1 G

Ω

10 M

Ω

1 M

Ω

100 M

Ω

100 G

Ω

20

G6849

G6849-01

9.1 ± 0.2

8.1 ± 0.1

5.9 ± 0.1

ACTIVE AREA

WINDOW

DETAILS OF

PHOTODIODE

2

b

d

c

a

5.84

3.1 ± 0.6

0.45

LEAD

ANODE a

NC

ANODE b

NC

ANODE c

NC

ANODE d

CATHODE (COMMON)

PHOTOSENSITIVE

SURFACE

DETAILS OF

PHOTODIODE

9.1 ± 0.2

5.84

3.1 ± 0.6

8.1 ± 0.2

5.9 ± 0.2

1

b

d

c

a

0.45

LEAD

ANODE a

NC

ANODE b

NC

ANODE c

NC

ANODE d

CATHODE (COMMON)

PHOTOSENSITIVE

SURFACE

ACTIVE AREA

WINDOW

0.01

0.1

1

REVERSE VOLTAGE (V)

1 nF

10 pF

1 pF

100 pF

10 nF

(Typ. Ta=25 ˚C, f=1 MHz)

10

G6849-01

G6849

Cat. No. KIRD1042E02

Feb. 2002 DN

s Spectral response

KIRDB0002EB

s Photo sensitivity temperature

characteristic

KIRDB0042EA

s Dark current vs. reverse voltage

KMIRB0016EB

s Terminal capacitance vs.

reverse voltage

KMIRB0015EB

s Shunt resistance vs. ambient

temperature

KMIRB0014EA

s Dimensional outlines (unit: mm)

KIRDA0059EA

KIRDA0143EA

G6849

G6849-01

2