Electronic Components Datasheet Search |
|
G3018 Datasheet(PDF) 2 Page - E-Tech Electronics LTD |
|
G3018 Datasheet(HTML) 2 Page - E-Tech Electronics LTD |
2 / 4 page G3018 Page: 2/4 ISSUED DATE :2005/11/30 REVISED DATE : Electrical Characteristics(Tj = 25 Unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BVDSS 30 - - V VGS=0, ID=250uA Gate Threshold Voltage VGS(th) 0.8 - 2.0 V VDS=VGS, ID=0.1mA Forward Transconductance gfs 20 - - mS VDS=3V, ID=10mA Gate-Source Leakage Current IGSS - - ±1 uA VGS= ±20V Drain-Source Leakage Current IDSS - - 1 uA VDS=30V, VGS=0 - 5 8 VGS=4V, ID=10mA Static Drain-Source On-Resistance RDS(ON) - 7 13 VGS=2.5V, ID=1mA Input Capacitance Ciss - - 50 Output Capacitance Coss - - 25 Reverse Transfer Capacitance Crss - - 5 pF VGS=0V VDS=5V f=1.0MHz Source-Drain Diode Parameter Symbol Min. Typ. Max. Unit Test Conditions Forward On Voltage2 VSD - 0.84 1.5 V IS=100mA, VGS=0V Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 270 : /W when mounted on Min. copper pad. |
Similar Part No. - G3018 |
|
Similar Description - G3018 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |