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CDSH3-4448-G Datasheet(PDF) 1 Page - Comchip Technology |
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CDSH3-4448-G Datasheet(HTML) 1 Page - Comchip Technology |
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1 / 2 page  Maximum Ratings (Single diode, at TA=25°C unless otherwise noted) Parameter Symbol Unit Non-repetitive peak reverse voltage Peak repetitive peak reverse voltage Working peak reverse voltage DC blocking voltage RMS reverse voltage Forward continuous current Averaged rectified output current Peak forward surge current @TP=1.0μS @TP=1.0S Power dissipation Thermal resistance, junction to ambient Storage temperature Voltage: 80 Volts Current: 250 mA RoHS Device Dimensions in inches and (millimeter) Features -Fast switching speed. -For general purpose switching applications. -High conductance. Mechanical data -Case: SOT-523, molded plastic. -Terminals: Solder plated, solderable per MIL-STD- 202E, method 208C. -Weight: 0.002 grams approx. Circuit Diagram CDSH3-4448/A/C/S-G Page 1 QW-B0038 SMD Switching Diodes REV:A Comchip Technology CO., LTD. 0.067(1.70) 0.059(1.50) 0.033(0.85) 0.030(0.75) 0.043(1.10) 0.035(0.90) 1 2 3 0.008(0.20) 0.004(0.10) 0.069(1.75) 0.057(1.45) 0.004(0.10)min. 0.004(0.10)max. 0.031(0.80) 0.024(0.60) 0.012(0.30) 0.006(0.15) Value 1 2 3 1 2 3 1 2 3 1 2 3 CDSH3-4448-G Marking: A3 CDSH3-4448A-G Marking: A6 CDSH3-4448C-G Marking: A7 CDSH3-4448S-G Marking: AB Electrical Characteristics (Single diode, at TA=25°C unless otherwise noted) Parameter Symbol Unit Reverse breakdown voltage Forward voltage Reverse current Capacitance between terminals Reverse recovery time Conditions Max. VBR VF1 VF2 VF3 VF4 IR1 IR2 CT Trr IR=2.5μA IF=5mA IF=10mA IF=100mA IF=150mA VR=70V VR=20V VR=6V, f=1MHz VR=6V, IF=5mA Min. Typ. 80 0.62 0.72 0.855 1.0 1.25 0.1 25 3.5 4 V V V V V μ A nA pF nS VRM VRRM VRWM VR VR(RMS) IFM IO IFSM PD RθJA TSTG 100 80 57 500 250 4.0 2.0 150 833 -65 to +150 V V V mA mA A mW OC/W OC SOT-523 |
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Similar Description - CDSH3-4448-G |
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