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FDPF12N50NZT Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FDPF12N50NZT Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 10 page November 2013 ©2010 Fairchild Semiconductor Corporation FDP12N50NZ / FDPF12N50NZ Rev. C1 www.fairchildsemi.com 1 FDP12N50NZ / FDPF12N50NZ N-Channel UniFETTM II MOSFET 500 V, 11.5 A, 520 m Features •RDS(on) = 460 m (Typ.) @ VGS = 10 V, ID = 5.75 A • Low Gate Charge (Typ. 23 nC ) • Low Crss (Typ. 14 pF ) • 100% Avalanche Tested • ESD Improved Capability • RoHS Compliant Applications • LCD/LED/PDP TV • Lighting • Uninterruptible Power Supply Description UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also pro- vides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power con- verter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp bal- lasts. MOSFET Maximum Ratings T C = 25 oC unless otherwise noted. *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FDP12N50NZ FDPF12N50NZ Unit VDSS Drain to Source Voltage 500 V VGSS Gate to Source Voltage ±25 V ID Drain Current - Continuous (TC = 25oC) 11.5 11.5* A - Continuous (TC = 100oC) 6.9 6.9* IDM Drain Current - Pulsed (Note 1) 46 46* A EAS Single Pulsed Avalanche Energy (Note 2) 560 mJ IAR Avalanche Current (Note 1) 11.5 A EAR Repetitive Avalanche Energy (Note 1) 17 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25oC) 170 42 W - Derate above 25oC 1.37 0.33 W/oC TJ, TSTG Operating and Storage Temperature Range -55 to +150 oC TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds 300 oC Symbol Parameter FDP12N50NZ FDPF12N50NZ Unit RJC Thermal Resistance, Junction to Case, Max. 0.73 3.0 oC/W RJA Thermal Resistance, Junction to Ambient, Max. 62.5 62.5 TO-220 GD S TO-220F G DS G D S |
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