November 2013

©2010 Fairchild Semiconductor Corporation

FDP12N50NZ / FDPF12N50NZ Rev. C1

www.fairchildsemi.com

1

FDP12N50NZ / FDPF12N50NZ



500 V, 11.5 A, 520 m



Features

• Low Gate Charge (Typ. 23 nC )

• 100% Avalanche Tested

• ESD Improved Capability

• RoHS Compliant

Applications

• LCD/LED/PDP TV

• Lighting

• Uninterruptible Power Supply

Description

MOSFET family based on advanced planar stripe and DMOS

technology. This advanced MOSFET family has the smallest

on-state resistance among the planar MOSFET, and also pro-

vides superior switching performance and higher avalanche

energy strength. In addition, internal gate-source ESD diode

allows UniFET II MOSFET to withstand over 2kV HBM surge

stress. This device family is suitable for switching power con-

verter applications such as power factor correction (PFC), flat

panel display (FPD) TV power, ATX and electronic lamp bal-

lasts.

*Drain current limited by maximum junction temperature

Thermal Characteristics

Symbol

Parameter

FDP12N50NZ FDPF12N50NZ

Unit

Drain to Source Voltage

500

V

Gate to Source Voltage

±25

V

Drain Current

11.5

11.5*

A

6.9

6.9*

Drain Current

- Pulsed

(Note 1)

46

46*

A

Single Pulsed Avalanche Energy

(Note 2)

560

mJ

Avalanche Current

(Note 1)

11.5

A

Repetitive Avalanche Energy

(Note 1)

17

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

4.5

V/ns

Power Dissipation

170

42

W

1.37

0.33

Operating and Storage Temperature Range

-55 to +150

Maximum Lead Temperature for Soldering,

1/8” from Case for 5 Seconds

300

Symbol

Parameter

FDP12N50NZ FDPF12N50NZ

Unit

Thermal Resistance, Junction to Case, Max.

0.73

3.0

Thermal Resistance, Junction to Ambient, Max.

62.5

62.5

TO-220

GD

S

TO-220F

G

DS

G

D

S