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GE80N03 Datasheet(PDF) 2 Page - E-Tech Electronics LTD |
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GE80N03 Datasheet(HTML) 2 Page - E-Tech Electronics LTD |
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2 / 5 page  GE80N03 Page: 2/5 ISSUED DATE :2005/06/24 REVISED DATE : Electrical Characteristics(Tj = 25 Unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BVDSS 30 - - V VGS=0, ID=250uA Breakdown Voltage Temperature Coefficient BVDSS / Tj - 0.035 - V/ : Reference to 25 : , ID=1mA Gate Threshold Voltage VGS(th) 1.0 - 3.0 V VDS=VGS, ID=250uA Forward Transconductance gfs - 50 - S VDS=10V, ID=40A Gate-Source Leakage Current IGSS - - D100 nA VGS= D20V Drain-Source Leakage Current(Tj=25 : ) - - 1 uA VDS=30V, VGS=0 Drain-Source Leakage Current(Tj=150 : ) IDSS - - 25 uA VDS=24V, VGS=0 - 6 8 VGS=10V, ID=40A Static Drain-Source On-Resistance RDS(ON) - 9 12 m Ł VGS=4.5V, ID=32A Total Gate Charge2 Qg - 42 - Gate-Source Charge Qgs - 5.2 - Gate-Drain (“Miller”) Change Qgd - 26 - nC ID=40A VDS=24V VGS=5V Turn-on Delay Time2 Td(on) - 9.9 - Rise Time Tr - 100 - Turn-off Delay Time Td(off) - 37 - Fall Time Tf - 60 - ns VDS=15V ID=40A VGS=10V RG=3.3 Ł RD=0.37 Ł Input Capacitance Ciss - 1950 - Output Capacitance Coss - 895 - Reverse Transfer Capacitance Crss - 315 - pF VGS=0V VDS=25V f=1.0MHz Source-Drain Diode Parameter Symbol Min. Typ. Max. Unit Test Conditions Forward On Voltage2 VSD - - 1.3 V IS=80A, VGS=0V, Tj=25 : Continuous Source Current (Body Diode) IS - - 80 A VD= VG=0V, VS=1.3V Pulsed Source Current (Body Diode) 1 ISM - - 315 A Notes: 1. Pulse width limited by safe operating area. 2. Pulse width 300us, duty cycle 2%. |
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