GE09N70 datasheet(1/5 Pages) ETL

Part #	GE09N70

Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Manufacturer	ETL [E-Tech Electronics LTD]

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ISSUED DATE :2005/04/21

REVISED DATE :

G

G E

E 0099N

N 7700

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GE09N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC

converter applications. TO-220 type provide high blocking voltage to overcome voltage surge and sag in the

toughest power system with the best combination of fast switching, ruggedized design and cost-effectiveness.

The TO-220 package is universally preferred for all commercial-industrial applications. The device is suited for

switch mode power supplies, DC-AC converters and high current high speed switching circuits.

Features

*Dynamic dv/dt Rating

*Simple Drive Requirement

*Repetitive Avalanche Rated

*Fast Switching Speed

Package Dimensions

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

4.40

4.80

c1

1.25

1.45

b

0.76

1.00

b1

1.17

1.47

c

0.36

0.50

L

13.25

14.25

D

8.60

9.00

e

2.54 REF.

E

9.80

10.4

L1

2.60

2.89

L4

14.7

15.3

Ø

3.71

3.96

L5

6.20

6.60

A1

2.60

2.80

Absolute Maximum Ratings

Parameter

Symbol

Ratings

Unit

Drain-Source Voltage

- /A/H

VDS

600/650/700

V

Gate-Source Voltage

VGS

f 20

V

Continuous Drain Current , VGS@10V

ID @TC=25 :

9

A

Continuous Drain Current , VGS@10V

ID @TC=100 :

5

A

Pulsed Drain Current1

IDM

40

A

Total Power Dissipation

PD @TC=25 :

156

W

Linear Derating Factor

1.25

W/

Single Pulse Avalanche Energy2

EAS

305

mJ

Avalanche Current

IAR

9

A

Repetitive Avalanche Energy

EAR

9

mJ

Operating Junction and Storage Temperature Range

Tj, Tstg

-55 ~ +150

Thermal Data

Parameter

Symbol

Value

Unit

Thermal Resistance Junction-case

Max.

Rthj-c

0.8

/W

Thermal Resistance Junction-ambient

Max.

Rthj-a

62

/W

BVDSS 600/650/700V

RDS(ON)

0.75

ID

9A

Pb Free Plating Product

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