US1B datasheet(2/2 Pages) GE

Part #	US1B

Description	SURFACE MOUNT ULTRAFAST EFFICIENT RECTIFIER

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Manufacturer	GE [General Semiconductor]

Direct Link	http://www.vishay.com

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RATING AND CHARACTERISTIC CURVES US1A THRU US1J

FIG. 1 - FORWARD CURRENT DERATING CURVE

LEAD TEMPERATURE, °C

FIG.2 - MAXIMUM NON-REPETITIVE PEAK

FORWARD SURGE CURRENT

NUMBER OF CYCLES AT 60 Hz

FIG. 3 - TYPICAL INSTANTANEOUS FORWARD

CHARACTERISTICS

FIG. 4 - TYPICAL REVERSE LEAKAGE

CHARACTERISTICS

INSTANTANEOUS FORWARD VOLTAGE,

VOLTS

PERCENT OF RATED PEAK REVERSE

VOLTAGE, %

FIG. 5 - TYPICAL JUNCTION CAPACITANCE

REVERSE VOLTAGE, VOLTS

8.3ms SINGLE HALF SINE-WAVE

(JEDEC Method)

TL=110°C

TJ=150°C

TJ=125°C

TJ=100°C

TJ=25°C

0.2 x 0.2” (5.0 x 5.0mm)

COPPER PAD AREAS

US1A THRU US1G

US1J - US1M

US1A - US1G

TJ=25°C

PULSE WIDTH=300

µs

1% DUTY CYCLE

TJ=25°C

f=1.0 MHZ

Vsiq=50mVp-p

RESISTIVE OR INDUCTIVE LOAD

US1J - US1M

FIG. 6 - TYPICAL TRANSIENT THERMAL IMPEDANCE

t, PULSE DURATION, sec

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