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UGF8GT Datasheet(PDF) 2 Page - General Semiconductor

Part # UGF8GT
Description  ULTRAFAST SOFT RECOVERY RECTIFIER
Download  2 Pages
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Manufacturer  GE [General Semiconductor]
Direct Link  http://www.vishay.com
Logo GE - General Semiconductor

UGF8GT Datasheet(HTML) 2 Page - General Semiconductor

  UGF8GT Datasheet HTML 1Page - General Semiconductor UGF8GT Datasheet HTML 2Page - General Semiconductor  
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10
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0
25
50
75
100
125
150
0
25
50
75
100
125
150
0
2
4
6
8
10
0.4
0.8
1.2
1.6
0.01
0.1
1
10
100
0.2
0.6
1
1.4
1.8
25
50
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100
125
0
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0.1
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1,000
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1,000
10,000
FIG. 1 -FORWARD CURRENT DERATING CURVE
CASE TEMPERATURE, °C
FIG. 3 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS PER LEG
TJ=25°C
PULSE WIDTH=300
µs
1% DUTY CYCLE
FIG. 4 - TYPICAL REVERSE CHARACTERISTICS
PER LEG
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
TC=105
°C
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT PER LEG
REVERSE VOLTAGE, VOLTS
TJ=125
°C
f=1.0 MHz
Vsig=50MVp-p
NUMBER OF CYCLES AT 60 HZ
PERCENT OF RATED PEAK REVERSE
VOLTAGE, %
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
RESISTIVE OR INDUCTIVE LOAD
RATINGS AND CHARACTERISTIC CURVES UGF8FT AND UGF8GT
TJ=125
°C
TJ=125
°C
TJ=100
°C
TJ=100
°C
TJ=25
°C
TJ=25
°C
0
25
50
75
100
125
150
175
0
10
20
30
40
50
60
FIG. 5 - REVERSE SWITCHING
CHARACTERISTICS
JUNCTION TEMPERATURE, °C
di/dt=20A/
µs
di/dt=150A/
µs
di/dt=100A/
µs
di/dt=50A/
µs
di/dt= 150A/
µs
di/dt=20A/
µs
di/dt=50A/
µs
di/dt=100A/
µs
IF=4.0A
VR=30V
trr
Qrr


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