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TLC5540INSRG4 Datasheet(PDF) 5 Page - Texas Instruments |
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TLC5540INSRG4 Datasheet(HTML) 5 Page - Texas Instruments |
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5 / 24 page  TLC5540 SLAS105D − JANUARY 1995 − REVISED APRIL 2004 www.ti.com 5 electrical characteristics at VDD = 5 V, VI(REFT) = 2.6 V, VI(REFB) = 0.6 V, fs = 40 MSPS, TA = 25°C (unless otherwise noted) PARAMETER TEST CONDITIONS† MIN TYP MAX UNIT EL Linearity error, integral TA = 25°C ±0.6 ±1 EL Linearity error, integral fs = 40 MSPS, TA = MIN to MAX ±1 LSB ED Linearity error, differential fs = 40 MSPS, VI = 0.6 V to 2.6 V TA = 25°C ±0.3 ±0.75 LSB ED Linearity error, differential VI = 0.6 V to 2.6 V TA = MIN to MAX ±1 Self bias (1), VRB Short REFB to REFBS See Figure 13 0.57 0.61 0.65 Self bias (1), VRT Short REFT to REFTS See Figure 13 2.47 2.63 2.80 V Self bias (2), VRB Short REFB to AGND See Figure 14 AGND V Self bias (2), VRT Short REFT to REFTS See Figure 14 2.18 2.29 2.4 Iref Reference-voltage current VI(REFT) − VI(REFB) = 2 V 5.2 7.5 12 mA Rref Reference-voltage resistor Between REFT and REFB terminals 165 270 350 Ω Ci Analog input capacitance VI(ANLG) = 1.5 V + 0.07 Vrms 4 pF EZS Zero-scale error VI(REFT) − VI(REFB) = 2 V −18 −43 −68 mV EFS Full-scale error VI(REFT) − VI(REFB) = 2 V −25 0 25 mV IIH High-level input current VDD = 5.25 V, VIH = VDD 5 A IIL Low-level input current VDD = 5.25 V, VIL = 0 5 µA IOH High-level output current OE = GND, VDD = 4.75 V, VOH = VDD −0.5 V −1.5 mA IOL Low-level output current OE = GND, VDD = 4.75 V, VOL = 0.4 V 2.5 mA IOZH(lkg) High-level high-impedance-state output leakage current OE = VDD, VDD = 5.25, VOH = VDD 16 A IOZL(lkg) Low-level high-impedance-state output leakage current OE = VDD, VDD = 4.75, VOL = 0 16 µA IDD Supply current fs = 40 MSPS, CL ≤ 25 pF, NTSC‡ ramp wave input, See Note 1 17 27 mA † Conditions marked MIN or MAX are as stated in recommended operating conditions. ‡ National Television System Committee (1) Supply current specification does not include Iref. |
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