IXFX32N90P datasheet(1/5 Pages) IXYS

Part #	IXFX32N90P

Description	N-Channel Enhancement Mode

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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1 / 5 page

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

900

V

DGR

T

J

= 25

°C to 150°C, R

GS = 1MΩ

900

V

GSS

Continuous

±30

V

GSM

Transient

±40

V

I

D25

T

C = 25°C32

A

I

DM

T

C = 25°C, Pulse Width Limited by TJM

80

A

I

A

T

C = 25°C16

A

E

AS

T

C = 25°C

2

J

dv/dt

I

S

≤ I

DM, VDD ≤ VDSS, TJ ≤ 150°C

15

V/ns

P

D

T

C = 25°C

960

W

T

J

-55 to +150

°C

T

JM

150

°C

T

stg

-55 to +150

°C

T

L

1.6mm (0.062 in.) from Case for 10s

300

°C

T

SOLD

Plastic Body for 10s

260

°C

M

d

Mounting Torque (TO-264)

1.13/10

Nm/lb.in.

F

C

Mounting Force

(PLUS247)

20..120 /4.5..27

N/lb.

Weight

TO-264

10

g

PLUS247

6

g

IXFK32N90P

IXFX32N90P

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Rectifier

V

DSS

= 900V

I

D25

= 32A

R

DS(on)

< 300m

Ω

DS100387(9/11)

Advance Technical Information

G = Gate

D

= Drain

S = Source

Tab = Drain

PLUS247 (IXFX)

Tab

G

D

S

TO-264 (IXFK)

S

G

D

Tab

PolarTM HiPerFETTM

Power MOSFETs

Features

Low R

DS(on) and QG

Avalanche Rated

Low Package Inductance

Fast Intrinsic Rectifier

Advantages

High Power Density

Easy to Mount

Space Savings

Applications

Switch-Mode and Resonant-Mode

Power Supplies

DC-DC Converters

Laser Drivers

AC and DC Motor Drives

Robotics and Servo Controls

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 3mA

900

V

GS(th)

V

DS = VGS, ID = 1mA

3.5

6.5

V

I

GSS

V

GS = ±30V, VDS = 0V

±200 nA

I

DSS

V

DS = VDSS, VGS = 0V

25

μA

T

J = 125°C

2 mA

R

DS(on)

V

GS = 10V, ID = 0.5 • ID25, Note 1

300 m

Ω

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