GaAs Infrared Emitter

CCCC

OPE5594A

The OPE5594S is GaAlAs infrared emitting diode

DIMENSIONS (Unit : mm)

that is designed for high reliability, high radiant intensity and

low forward voltage .This device is optimized for efficiency

at emission wavelength 940nm and has a high radiant

efficiency over a wide range of forward current.

and has narrow beam angle with lensed package

and cup frame.

FEATURES

C

• High-output powerC

• Narrow beam angle

• High reliability and long term stability

• Available for pulse operating

C

APPLICATIONS

C

• Optical emitters

• Optical switches

• Smoke sensors

• IR remote control

• IR sound transmission

STORAGE

• Condition : 5°C~35°C,R.H.60%

• Terms : within 3 months from production date

• Remark : Once the package is opened, the products should be used within a day.

Otherwise, it should be keeping in a damp proof box with desiccants.

* Please take proper steps in order to secure reliability and safety in required conditions and environments

for this device.

MAXIMUM RATINGS

C C

C

CCCCCCCCCCCCCCCCC(Ta=25°C )

Item

Symbol

Rating

Unit

Power Dissipation

150

C

Forward current

100

EC

Pulse forward current

CCC 1C

1.0

A

C

Reverse voltage

5.0

C

Operating temp.

Topr.

-25~ +85

°CC

Soldering temp.

CCCCCCCCCCCCCC 2

Tsol.

260.

°CC

ELECTRO-OPTICALCHARACTERISTICS

(Ta=25

°C)

Item

Symbol

Conditions

Min.

Typ.

Max.

Unit

Forward voltage

1.4

1.7

V

Reverse current

10

µA

Capacitance

Ct

f = 1MHz

20

pF

Radiant intensity

Ie

80

mW/

Peak emission wavelength

p

940

nm

Spectral bandwidth 50%

45

nm

Half angle



±10

deg.

CC

2-

0.5

2.5

Anode

Cathode

Tolerance :

±0.2mm