LMH6618

ADC121S101

0.1 PF

10 PF

0.1 PF

10 PF

0.1 PF

V

+

0.01 PF

14.3 k:

0.1 PF

1 PF

GND

5V

1.24 k:

1 nF

150 pF

549:

V

+

-

+

22:

390 pF

549:

IN

1 PF

V

+

14.3 k:

5.6 PF

LMH6618, LMH6619

SNOSAV7E – AUGUST 2007 – REVISED OCTOBER 2012

www.ti.com

Typical Application

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

ABSOLUTE MAXIMUM RATINGS

(1)

Human Body Model

For input pins only

2000V

For all other pins

2000V

Machine Model

200V

12V

150°C max

(1)

Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for

which the device is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test

conditions, see the Electrical Characteristics.

(2)

Human Body Model, applicable std. MIL-STD-883, Method 3015.7. Machine Model, applicable std. JESD22-A115-A (ESD MM std. of

JEDEC)Field-Induced Charge-Device Model, applicable std. JESD22-C101-C (ESD FICDM std. of JEDEC).

(3)

OPERATING RATINGS

(1)

2.7V to 11V

−40°C to +125°C

Package Thermal Resistance (

6-Pin SOT (DDC0006A)

231°C/W

8-Pin SOIC (D0008A)

160°C/W

(1)

Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for

which the device is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test

conditions, see the Electrical Characteristics.

(2)

2

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