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JANTX1N6624 Datasheet(PDF) 1 Page - Microsemi Corporation |
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JANTX1N6624 Datasheet(HTML) 1 Page - Microsemi Corporation |
1 / 4 page VOIDLESS-HERMETICALLY SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS S C O T TS DALE DIVISION 1N6620 thru 1N6625 DESCRIPTION APPEARANCE This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF- 19500/585 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 1.5 to 2.0 Amp rated rectifiers for working peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless- glass construction using an internal “Category I” metallurgical bond. These devices are also available in surface mount MELF package configurations by adding a “US” suffix (see separate data sheet for 1N6620US thru 1N6625US). Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including standard, fast and ultrafast device types in both through-hole and surface mount packages. Package “A” Axial IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com Microsemi Scottsdale Division Page 1 FEATURES APPLICATIONS / BENEFITS • Popular JEDEC registered 1N6620 to 1N6625 series • Voidless hermetically sealed glass package • Extremely robust construction • Triple-layer passivation • Internal “Category I” Metallurgical bonds • JAN, JANTX, and JANTXV available per MIL-PRF- 19500/585 • Further options for screening in accordance with MIL-PRF-19500 for JANS by using a “SP” prefix, e.g. SP6620, SP6624, etc. • Surface mount equivalents also available in a square end-cap MELF configuration with “US” suffix (see separate data sheet for 1N6620US thru 1N6625US) • Ultrafast recovery rectifier series 200 to 1000 V • Military and other high-reliability applications • Switching power supplies or other applications requiring extremely fast switching & low forward loss • High forward surge current capability • Low thermal resistance • Controlled avalanche with peak reverse power capability • Inherently radiation hard as described in Microsemi MicroNote 050 MAXIMUM RATINGS MECHANICAL AND PACKAGING • Junction Temperature: -65 oC to +150oC • Storage Temperature: -65 oC to +175oC • Peak Forward Surge Current @ 25 oC: 20 Amps (except 1N6625 which is 15 Amps) Note: Test pulse = 8.3 ms, half-sine wave. • Average Rectified Forward Current (IO) at TL= +55 oC (L=.375 inch from body): 1N6620 thru 1N6622: 2.0 Amps 1N6623 thru 1N6625: 1.5 Amps (Derate linearly at 0.833%/ oC for T L> +55 oC) • Average Rectified Forward Current (IO) at TA=25 oC: 1N6620 thru 1N6622: 1.2 Amps 1N6623 thru 1N6625: 1.0 Amp (Derate linearly at 0.67%/ oC for T A>+25 oC. This I O rating is typical for PC boards where thermal resistance from mounting point to ambient is sufficiently controlled where TJ(max) is not exceeded.) • Thermal Resistance L= 0.375 inch (RθJL): 38 oC/W • Capacitance at VR= 10 V: 10 pF • Solder temperature: 260 oC for 10 s (maximum) • CASE: Hermetically sealed voidless hard glass with Tungsten slugs • TERMINATIONS: Axial-leads are Copper with Tin/Lead (Sn/Pb) finish • MARKING: Body painted and part number, etc. • POLARITY: Cathode indicated by band • Tape & Reel option: Standard per EIA-296 • Weight: 340 mg • See package dimensions on last page Copyright © 2009 10-06-2009 REV C; SA7-55.pdf 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 |
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