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BB369S Datasheet(PDF) 2 Page - General Semiconductor

Part # BB369S
Description  Tuner Diodes
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Manufacturer  GE [General Semiconductor]
Direct Link  http://www.vishay.com
Logo GE - General Semiconductor

BB369S Datasheet(HTML) 2 Page - General Semiconductor

  BB369S Datasheet HTML 1Page - General Semiconductor BB369S Datasheet HTML 2Page - General Semiconductor  
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ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
BB369S
Symbol
Min.
Typ.
Max.
Unit
Reverse Breakdown Voltage
at IR = 100 µA
V(BR)R
32
V
Leakage Current
at VR = 30 V
IR
––10
nA
Capacitance, f = 1 MHz
at VR = 28 V
at VR = 25 V
at VR = 1 V
at VR = 2 V
Ctot
Ctot
Ctot
Ctot
2.65
2.75
55.0
42.5
2.88
3.0
60.5
47.5
pF
pF
pF
pF
Effective Capacitance Ratio, f = 1 MHz
at VR = 1 to 28 V
Effective Capacitance Ratio
at VR = 2 to 25 V
Effective Capacitance Ratio
at VR = 1 to 2 V
Ctot (1 V)
Ctot (28V)
Ctot (2 V)
Ctot (25V)
Ctot (1 V)
Ctot (2 V)
20.0
15.3
1.29
23.0
17.8
Series Resistance
at f = 300 MHz, Ctot = 25 pF
rs
–1.0
Series Inductance
LS
–2.5
nH
For any two of six consecutive diodes in the carrier tape, the maximum capacitance deviation in the reverse bias
voltage of VR = 0.5 to 28 V is max. 3.0%


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