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BB369S Datasheet(PDF) 2 Page - General Semiconductor |
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BB369S Datasheet(HTML) 2 Page - General Semiconductor |
2 / 2 page ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified BB369S Symbol Min. Typ. Max. Unit Reverse Breakdown Voltage at IR = 100 µA V(BR)R 32 – – V Leakage Current at VR = 30 V IR ––10 nA Capacitance, f = 1 MHz at VR = 28 V at VR = 25 V at VR = 1 V at VR = 2 V Ctot Ctot Ctot Ctot 2.65 2.75 55.0 42.5 – – – – 2.88 3.0 60.5 47.5 pF pF pF pF Effective Capacitance Ratio, f = 1 MHz at VR = 1 to 28 V Effective Capacitance Ratio at VR = 2 to 25 V Effective Capacitance Ratio at VR = 1 to 2 V Ctot (1 V) Ctot (28V) Ctot (2 V) Ctot (25V) Ctot (1 V) Ctot (2 V) 20.0 15.3 1.29 – – – 23.0 17.8 – – – Series Resistance at f = 300 MHz, Ctot = 25 pF rs –1.0 – Ω Series Inductance LS –2.5 – nH For any two of six consecutive diodes in the carrier tape, the maximum capacitance deviation in the reverse bias voltage of VR = 0.5 to 28 V is max. 3.0% |
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