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2N5206 Datasheet(PDF) 1 Page - Microsemi Corporation

Part # 2N5206
Description  PNPN SILICON, REVERSE-BLOCKING, POWER TRIODE THYRISTORS
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

2N5206 Datasheet(HTML) 1 Page - Microsemi Corporation

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T4-LDS-0249, Rev. 1 (120183)
©2011 Microsemi Corporation
Page 1 of 6
2N682, 2N683, 2N685 – 2N692
and 2N5206
Available on
commercial
versions
PNPN SILICON, REVERSE-BLOCKING,
POWER TRIODE THYRISTORS
Qualified per MIL-PRF-19500/108
Qualified Levels:
JAN and JANTX
DESCRIPTION
This silicon controlled rectifier device is military qualified up to a JANTX level for high-reliability
applications. Microsemi also offers numerous other products to meet higher and lower power
voltage regulation applications.
TO-208 / TO-48
Package
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
JEDEC registered 2N682, 2N683, 2N685, 2N687 – 2N692 and 2N5206.
JAN and JANTX qualifications are available per MIL-PRF-19500/108.
RoHS compliant versions available (commercial grade only).
APPLICATIONS / BENEFITS
A general purpose, reverse-blocking thyristor.
MAXIMUM RATINGS
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/Test Conditions
Symbol
Value
Unit
Junction Temperature
TJ
-65 to +125
oC
Storage Temperature
TSTG
-65 to +150
oC
Gate Voltage
V GM
5
V(pk)
Maximum Average DC Output Current
(1)
IO
16
A
Non-repetitive Peak On-State Current
(2) @ t = 7 ms
ITSM
150
A
Notes:
1. This average forward current is for a maximum case temperature of +65 °C, and 180 electrical degrees
of conduction.
2. Surge rating is non-recurrent and applies only with device in the conducting state. The peak rate of surge
current must not exceed 100 amperes during
the first 10 μs after switching from the off (blocking) state
to the on (conducting) state. This time is measured from the point where the thyristor voltage has
decayed to 90 percent of its initial blocking value.


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