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MBM29LV160BE Datasheet(PDF) 3 Page - Fujitsu Component Limited. |
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MBM29LV160BE Datasheet(HTML) 3 Page - Fujitsu Component Limited. |
3 / 59 page MBM29LV160TE/BE-70/90/12 3 s FEATURES •0.23 µm Process Technology • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard world-wide pinouts 48-pin TSOP (I) (Package suffix: TN-Normal Bend Type, TR-Reversed Bend Type) 48-pin CSOP (Package suffix: PCV) 48-ball FBGA (Package suffix: PBT) • Minimum 100,000 program/erase cycles • High performance 70 ns maximum access time • Sector erase architecture One 8K word, two 4K words, one 16K word, and thirty-one 32K words sectors in word mode One 16K byte, two 8K bytes, one 32K byte, and thirty-one 64K bytes sectors in byte mode Any combination of sectors can be concurrently erased. Also supports full chip erase • Boot Code Sector Architecture T = Top sector B = Bottom sector • Embedded EraseTM Algorithms Automatically pre-programs and erases the chip or any sector • Embedded ProgramTM Algorithms Automatically programs and verifies data at specified address •Data Polling and Toggle Bit feature for detection of program or erase cycle completion • Ready/Busy output (RY/BY) Hardware method for detection of program or erase cycle completion • Automatic sleep mode When addresses remain stable, automatically switches themselves to low power mode •Low VCC write inhibit ≤ 2.5 V • Erase Suspend/Resume Suspends the erase operation to allow a read data and/or program in another sector within the same device • Sector protection Hardware method disables any combination of sectors from program or erase operations • Sector Protection Set function by Extended sector Protection command • Fast Programming Function by Extended command • Temporary sector unprotection Temporary sector unprotection via the RESET pin • In accordance with CFI (Common Flash Memory Interface) |
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