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MBM29LV200TC-12PFTR Datasheet(PDF) 1 Page - Fujitsu Component Limited. |
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MBM29LV200TC-12PFTR Datasheet(HTML) 1 Page - Fujitsu Component Limited. |
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1 / 54 page  DS05-20865-3E FUJITSU SEMICONDUCTOR DATA SHEET FLASH MEMORY CMOS 2M (256K × 8/128K × 16) BIT MBM29LV200TC-70/-90/-12/MBM29LV200BC-70/-90/-12 s FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard world-wide pinouts 48-pin TSOP(I) (Package suffix: PFTN – Normal Bend Type, PFTR – Reversed Bend Type) 44-pin SOP (Package suffix: PF) • Minimum 100,000 program/erase cycles • High performance 70 ns maximum access time • Sector erase architecture One 8K word, two 4K words, one 16K word, and three 32K words sectors in word mode One 16K byte, two 8K bytes, one 32K byte, and three 64K bytes sectors in byte mode Any combination of sectors can be concurrently erased. Also supports full chip erase • Boot Code Sector Architecture T = Top sector B = Bottom sector • Embedded EraseTM Algorithms Automatically pre-programs and erases the chip or any sector • Embedded ProgramTM Algorithms Automatically writes and verifies data at specified address •Data Polling and Toggle Bit feature for detection of program or erase cycle completion • Ready/Busy output (RY/BY) Hardware method for detection of program or erase cycle completion • Automatic sleep mode When addresses remain stable, automatically switch themselves to low power mode •Low VCC write inhibit ≤ 2.5 V • Erase Suspend/Resume Suspends the erase operation to allow a read in another sector within the same device (Continued) Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc. |
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