PESD5V0S1BLD

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© NXP B.V. 2010. All rights reserved.

Product data sheet

Rev. 1 — 12 October 2010

8 of 13

NXP Semiconductors

PESD5V0S1BLD

Low capacitance bidirectional ESD protection diode

7.

Application information

The PESD5V0S1BLD is designed for the protection of one bidirectional data or signal line

from the damage caused by ESD and surge pulses. The device may be used on lines

where the signal polarities are both, positive and negative with respect to ground. The

PESD5V0S1BLD provides a surge capability of 130 W per line for an 8/20

μs waveform.

Circuit board layout and protection device placement

Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)

and surge transients. The following guidelines are recommended:

1. Place the device as close to the input terminal or connector as possible.

2. The path length between the device and the protected line should be minimized.

3. Keep parallel signal paths to a minimum.

4. Avoid running protected conductors in parallel with unprotected conductors.

5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and

ground loops.

6. Minimize the length of the transient return path to ground.

7. Avoid using shared transient return paths to a common ground point.

8. Ground planes should be used whenever possible. For multilayer PCBs, use ground

vias.

8.

Test information

8.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council

(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is

suitable for use in automotive applications.

Fig 10. Application diagram

006aaa057

PESD5V0S1Bx

GND

signal line