©2002 Fairchild Semiconductor Corporation

Rev. A3, August 2002

NPN Epitaxial Silicon Transistor

Symbol

Parameter

Value

Units

Collector-Base Voltage

40

V

Collector-Emitter Voltage

40

V

Emitter-Base Voltage

5

V

Collector Current

100

mA

Collector Power Dissipation

200

mW

Junction Temperature

150

°C

Storage Temperature

-55 ~ 150

°C

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

Collector-Base Breakdown Voltage

40

V

Collector-Emitter Breakdown Voltage

40

V

Collector Cut-off Current

0.1

µA

DC Current Gain

100

600

Collector-Emitter Saturation Voltage

0.3

V

Output Capacitance

f=1MHz

3.7

pF

Current Gain Bandwidth Product

250

MHz

R

Input Resistor

15

22

29

K

Ω

FJX3011R

• Switching circuit, Inverter, Interface circuit, Driver Circuit

• Built in bias Resistor (R=22K

Ω)

• Complement to FJX4011R

Equivalent Circuit

B

E

C

R

S11

Marking

1. Base 2. Emitter 3. Collector

1

2

SOT-323

3