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LMH658 Datasheet(PDF) 5 Page - Texas Instruments

Part # LMH658
Description  LMH6584/LMH6585 32x16 400 MHz Analog Crosspoint Switches, Gain of 1, Gain of 2
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

LMH658 Datasheet(HTML) 5 Page - Texas Instruments

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LMH6584, LMH6585
www.ti.com
SNOSB08B – APRIL 2008 – REVISED APRIL 2013
±5V Electrical Characteristics
(1)
Unless otherwise specified, typical conditions are: TA = 25°C, AV = +2, VS = ±5V, RL = 100Ω. Boldface limits apply at the
temperature extremes.
Parameter
Test Conditions
Min(2)
Typ(3)
Max(2)
Units
Frequency Domain Performance
SSBW
LMH6584, VOUT = 0.25 VPP
(4)
400
LMH6585, VOUT = 0.5 VPP
(4)
400
LSBW
LMH6584, VOUT = 1VPP, RL = 1 kΩ
(4)
400
−3 dB Bandwidth
MHz
LMH6585, VOUT = 2 VPP, RL = 1 kΩ
(4)
400
LMH6584, VOUT = 1VPP, RL = 150Ω
(4)
400
LMH6585, VOUT = 2 VPP, RL = 150Ω
(4)
400
GF
0.1 dB Gain Flatness
VOUT = 2 VPP, RL = 150Ω
50
MHz
DG
Differential Gain
RL = 150Ω, 3.58 MHz/ 4.43 MHz
.04
%
DP
Differential Phase
RL = 150Ω, 3.58 MHz/ 4.43 MHz
.03
deg
Time Domain Response
tr
LMH6584, 2V Step, 10% to 90%
1.75
ns
Rise Time
LMH6585, 2V Step, 10% to 90%
1.25
tf
LMH6584, 2V Step, 10% to 90%
1.5
Fall Time
ns
LMH6585, 2V Step, 10% to 90%
1.1
OS
Overshoot
2V Step
5
%
SR
LMH6584, 2 VPP, 40% to 60%
(5)
1100
Slew Rate
V/µs
LMH6585, 2 VPP, 40% to 60%
(5)
1700
ts
Settling Time
2V Step, VOUT Within 0.5%
10
ns
Distortion And Noise Response
HD2
2nd Harmonic Distortion
2 VPP, 5 MHz
−72
dBc
HD3
3rd Harmonic Distortion
2 VPP, 5 MHz
−68
dBc
en
Input Referred Voltage Noise
>1 MHz
12
nV/
√Hz
in
Input Referred Noise Current
>1 MHz
22
pA/
√Hz
Switching Time
50
ns
XTLK
Channel to Channel, f = 100 MHz
−43
dBc
Crosstalk
Channel to Channel, f = 10 MHz
−52
dBc
ISOL
Off Isolation
f = 100 MHz
−60
dBc
Static, DC Performance
AVOL
LMH6584
0.987
1.00
1.013
Voltage Gain
V/V
LMH6585
1.98
2.00
2.02
VOS
Input Offset Voltage
Input Referred
±2
±18
mV
TCVOS
Input Offset Voltage Temperature Drift See(6)
21
µV/°C
IB
Input Bias Current
Non-Inverting(7)
−7
−12
µA
TCIB
Input Bias Current Average Drift
Non-Inverting(6)
3.8
nA/°C
(1)
Electrical Table values apply only for factory testing conditions at the temperature indicated. No specification of parametric performance
is indicated in the electrical tables under conditions different than those tested.
(2)
Room Temperature limits are 100% production tested at 25°C. Device self heating results in TJ ≥ TA, however, test time is insufficient for
TJto reach steady state conditions. Limits over the operating temperature range are ensured through correlation using Statistical Quality
Control (SQC) methods.
(3)
Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and will also depend on the application and configuration. The typical values are not tested and are not ensured on shipped
production material.
(4)
The channel bandwidth varies over the different channel combinations and with expansion. See the application section for more details.
(5)
Slew Rate is the average of the rising and falling edges.
(6)
Drift determined by dividing the change in parameter at temperature extremes by the total temperature change.
(7)
Negative input current implies current flowing out of the device.
Copyright © 2008–2013, Texas Instruments Incorporated
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