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KSP13 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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KSP13 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
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1 / 4 page  ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings T a=25°C unless otherwise noted Electrical Characteristics T a=25°C unless otherwise noted * Pulse Test: Pulse Width ≤300µs, Duty Cycle≤2% Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCES Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 10 V IC Collector Current 500 mA PC Collector Power Dissipation 625 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Symbol Parameter Test Condition Min. Max. Units BVCES Collector-Emitter Breakdown Voltage IC=100µA, IB=0 30 V ICBO Collector Cut-off Current VCB=30V, IE=0 100 nA IEBO Emitter Cut-off Current VEB=10V, IC=0 100 nA hFE * DC Current Gain : KSP13 : KSP14 : KSP13 : KSP14 VCE=5V, IC=10mA VCE=5V, IC=100mA 5K 10K 10K 20K VCE (sat) Collector-Emitter Saturation Voltage IC=100mA, IB=0.1mA 1.5 V VBE (on) Base-Emitter On Voltage VCE=5V, IC=100mA 2.0 V fT Current Gain Bandwidth Product VCE=5V, IC=10mA f=100MHz 125 MHz KSP13/14 Darlington Transistor • Collector-Emitter Voltage: VCES=30V • Collector Power Dissipation: PC (max)=625mW 1. Emitter 2. Base 3. Collector TO-92 1 |
Similar Part No. - KSP13 |
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Similar Description - KSP13 |
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