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2SK3298 Datasheet(PDF) 1 Page - NEC |
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2SK3298 Datasheet(HTML) 1 Page - NEC |
1 / 8 page The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. © 1999, 2000 MOS FIELD EFFECT TRANSISTOR 2SK3298 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Document No. D14059EJ1V0DS00 (1st edition) Date Published April 2000 NS CP(K) Printed in Japan DATA SHEET The mark 5 5 5 5 shows major revised points. DESCRIPTION The 2SK3298 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, designed for high voltage applications such as switching power supply, AC adapter. FEATURES •Low gate charge QG = 34 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 7.5 A) •Gate voltage rating ±30 V •Low on-state resistance RDS(on) = 0.75 Ω MAX. (VGS = 10 V, ID = 4.0 A) •Avalanche capability ratings •Isolated TO-220 package ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 600 V Gate to Source Voltage (VDS = 0 V) VGSS ±30 V Drain Current (DC) (TC = 25°C) ID(DC) ±7.5 A Drain Current (Pulse) Note1 ID(pulse) ±30 A Total Power Dissipation (TA = 25°C) PT1 2.0 W Total Power Dissipation (TC = 25°C) PT2 40 W Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C Single Avalanche Current Note2 IAS 7.5 A Single Avalanche Energy Note2 EAS 37.5 mJ Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2. Starting Tch = 25 °C, VDD = 150 V, RG = 25 Ω, VGS = 20 V → 0 V ORDERING INFORMATION PART NUMBER PACKAGE 2SK3298 Isolated TO-220 |
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