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MB84VD2008 Datasheet(PDF) 9 Page - Fujitsu Component Limited. |
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MB84VD2008 Datasheet(HTML) 9 Page - Fujitsu Component Limited. |
9 / 30 page 9 MB84VD2008-10/MB84VD2009-10 Notes: 1. Address bits A11 to A18 = X = “H” or “L” for all address commands except or Program Address (PA), Sector Address (SA), and Bank Address (BA). 2. Bus operations are defined in Tables 2 and 3. 3. RA = Address of the memory location to be read PA = Address of the memory location to be programmed Addresses are latched on the falling edge of the write pulse. SA = Address of the sector to be erased. The combination of A18, A17, A16, A15, A14, A13, and A12 will uniquely select any sector. BA = Bank Address (A16 to A18) 4. RD = Data read from location RA during read operation. PD = Data to be programmed at location PA. Data is latched on the falling edge of write pulse. 5. SPA =Sector address to be protected. Set sector address (SA) and (A6, A1, A0) = (0, 1, 0). SD = Sector protection verify data. Output 01H at protected sector addresses and output 00H at unprotected sector addresses. * : This command is valid while Fast Mode. Table 7 Flash Memory Command Definitions Com- mand Sequence Bus Write Cycles Req’d First Bus Write Cycle Second Bus Write Cycle Third Bus Write Cycle Fourth Bus Read/Write Cycle Fifth Bus Write Cycle Sixth Bus Write Cycle Addr. Data Addr. Data Addr. Data Addr. Data Addr. Data Addr. Data Read/Reset 1 XXXH F0H —————————— Read/Reset 3 555H AAH 2AAH 55H 555H F0H RA RD — — — — Autoselect 3 555H AAH 2AAH 55H (BA) 555H 90H —————— Program 4 555H AAH 2AAH 55H 555H A0H PA PD — — — — Chip Erase 6 555H AAH 2AAH 55H 555H 80H 555H AAH 2AAH 55H 555H 10H Sector Erase 6 555H AAH 2AAH 55H 555H 80H 555H AAH 2AAH 55H SA 30H Erase Suspend 1 BA B0H —————————— Erase Resume 1 BA 30H —————————— Set to Fast Mode 3 555H AAH 2AAH 55H 555H 20H —————— Fast Program * 2 XXXH A0H PA PD ———————— Reset from Fast Mode * 2 BA 90H XXXH F0H ———————— Extended Sector Protect 4 XXXH 60H SPA 60H SPA 40H SPA SD — — — — |
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