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BUL310 Datasheet(PDF) 2 Page - Savantic, Inc. |
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BUL310 Datasheet(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors BUL310 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ; IB=0; L=25mH 500 V V(BR)EBO Emitter-base breakdwon voltage IE=10mA ;IC=0 9 V VCEsat-1 Collector-emitter saturation voltage IC=1A; IB=0.2A 0.5 V VCEsat-2 Collector-emitter saturation voltage IC=2A ;IB=0.4A 0.7 V VCEsat-3 Collector-emitter saturation voltage IC=3A ;IB=0.6A 1.1 V VBEsat-1 Base-emitter saturation voltage IC=1A; IB=0.2A 1.0 V VBEsat-2 Base-emitter saturation voltage IC=2A ;IB=0.4A 1.1 V VBEsat-3 Base-emitter saturation voltage IC=3A ;IB=0.6A 1.2 V ICES Collector cut-off current VCE=1000V; VBE=0 TC=125 100 500 µA ICEO Collector cut-off current VCE=400V; IB=0 250 µA hFE-1 DC current gain IC=10mA ; VCE=5V 10 hFE-2 DC current gain IC=3A ; VCE=2.5V 10 Switching times inductive load ts Storage time 1.9 µs tf Fall time IC=2A ;VCL=250V IB1 =0.4A;VBE(off)=-5V L=200µH; RBB=0B 0.16 µs |
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