BUL310 datasheet(2/3 Pages) SAVANTIC

Part #	BUL310

Description	Silicon NPN Power Transistors

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Manufacturer	SAVANTIC [Savantic, Inc.]

Direct Link	http://www.svntc.com

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SavantIC Semiconductor

Product Specification

2

Silicon NPN Power Transistors

BUL310

CHARACTERISTICS

Tj=25

unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-emitter sustaining voltage

IC=100mA ; IB=0; L=25mH

500

V

V(BR)EBO

Emitter-base breakdwon voltage

IE=10mA ;IC=0

9

V

VCEsat-1

Collector-emitter saturation voltage

IC=1A; IB=0.2A

0.5

V

VCEsat-2

Collector-emitter saturation voltage

IC=2A ;IB=0.4A

0.7

V

VCEsat-3

Collector-emitter saturation voltage

IC=3A ;IB=0.6A

1.1

V

VBEsat-1

Base-emitter saturation voltage

IC=1A; IB=0.2A

1.0

V

VBEsat-2

Base-emitter saturation voltage

IC=2A ;IB=0.4A

1.1

V

VBEsat-3

Base-emitter saturation voltage

IC=3A ;IB=0.6A

1.2

V

ICES

Collector cut-off current

VCE=1000V; VBE=0

TC=125

100

500

µA

ICEO

Collector cut-off current

VCE=400V; IB=0

250

µA

hFE-1

DC current gain

IC=10mA ; VCE=5V

10

hFE-2

DC current gain

IC=3A ; VCE=2.5V

10

Switching times inductive load

ts

Storage time

1.9

µs

tf

Fall time

IC=2A ;VCL=250V

IB1 =0.4A;VBE(off)=-5V

L=200µH; RBB=0B

0.16

µs

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