S525T-GS08 datasheet(2/7 Pages) VISHAY

Part #	S525T-GS08

Description	N-Channel MOS-Fieldeffect Triode, Depletion Mode

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Document Number 85045

Rev. 1.6, 08-Sep-08

S525T

Vishay Semiconductors

Electrical DC Characteristics

Tamb = 25 °C, unless otherwise specified

Electrical AC Characteristics

Tamb = 25 °C, unless otherwise specified

VDS = 10 V, ID = 10 mA, f = 1 MHz

Typical Characteristics (Tamb = 25

°C unless otherwise specified)

Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

Drain - source breakdown

voltage

ID = 10 μA, -VGS = 4 V

V(BR)DS

20

V

Gate - source breakdown

voltage

± IGS = 10 mA, VDS = 0

± V(BR)GSS

7.5

12

V

Gate - source leakage current

± VGS = 6 V, VDS = 0

± IGSS

50

nA

Drain current

VDS = 10 V, VGS = 0

IDSS

514

mA

Gate - source cut-off voltage

VDS = 10 V, ID = 20 μA-VGS(OFF)

2.5

V

Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

Forward transadmittance

| y21s |14

16

mS

Gate input capacitance

Cissg

2.7

pF

Feedback capacitance

Crss

25

fF

Output capacitance

Coss

1.0

pF

Noise figure

GS = 2 mS, GL = 0.5 mS,

f = 200 MHz

F1.0

dB

Power gain

GS = 2 mS, GL = 0.5 mS,

f = 200 MHz

Gps

25

dB

Figure 1. Total Power Dissipation vs. Ambient Temperature

0

50

100

150

200

250

300

020

40

60

80

100 120 140 160

96 12159

Tamb - Ambient Temperature (°C)

Figure 2. Drain Current vs. Drain Source Voltage

0

4

8

12

16

20

0246

8

VDS -Drain Source Voltage(V)

13612

VGS = 0.6V

-0.2V

0.4V

0

-0.4V

-0.6V

0.2V

10

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